NG3S918 - Semiconductors 01 Sep 2020 - 31 Aug 2025 | Version 2
Associated Module Information
| Module Code: | NG3S918 | ||
|---|---|---|---|
| Module Title: | Semiconductors | ||
| Faculty: | Faculty of Computing, Engineering and Science | ||
| Faculty Group: | Information and Electronics | ||
| Faculty Sub Group: | Electronics | ||
| Module Leader: | Peter Rees | ||
| Module Team: | Nigel Copner, Kang Li | ||
| First Intended Intake: | SEP 2019 | Final Year of Intake: | |
| Date Closed: | |||
| Credit Value: | 20 | Credit Level: | 6 |
| Language: | English | ||
| Percentage of Module Taught in Welsh: | 0 | ||
| Equivalent Module: | |||
| HECOS codes: | 100163 - electrical and electronic engineering | ||
| HECOS Code Weighting: | 100 | ||
Document Version Information
| Version | 2 |
|---|---|
| Valid From | 01 Sep 2020 |
| Valid To | 31 Aug 2025 |
Module Aims
Module Aims
• To develop an appropriate body of knowledge around semiconductors principles of operations and methods of fabrication.
Content Summary
Semiconductor materials /intrinsic/extrinsic
Properties of semiconductors-
Variable electrical conductivity, heterojunctions, excited electrons/energy bands/fermi/electrons and holes, carrier generation and recombination, light emission.
Materials-
Crystal lattice and bandgap engineering: group 14 (silicon, germanium)
Binary compounds (Gallium Arsenide, Silicon carbide, Gallium Nitride)
Ternary - AlGaAs, InGaN
Quaternary - InGaAsP
Semiconductor wafer processes:
Thermal oxidation (silicon dioxide gate insulator/field oxide
Photomasks/photolithography (circuit patterning IC) ultraviolet.
Etching/plasma
Diffusion/doping (pn junctions)
Semiconductor device construction and properties:
PN junction diode, Schottky Barrier, Zener Diodes, Transistors
Field effect transistors (FET/mosfets/mesfets/jfets)
LED’s, VCSELs and lasers.
Microwave, power transistors and MEMS.
Learning and Teaching Methods
| Activity Type | Hours |
|---|---|
| Lecture | 24 |
| Practical classes and workshops | 24 |
| Independent Study | 94 |
| Directed Study | 58 |
| Total Hours Selected | 200 |
Learning Outcomes
| # | Learning Outcome |
|---|---|
| LO1 | To acquire and demonstrate comprehensive knowledge of methods of fabrication relevant to the semiconductor industry. |
| LO2 | To acquire and demonstrate comprehensive knowledge of semiconductors, their classification and applications. |
Module Requisites
N/A
Assessment Criteria
| Assessment Category | Assessment Type | Description | Duration | Word Count | Weight (%) | Best of? | Pass Mark |
|---|---|---|---|---|---|---|---|
| Asynchronous Assessment | Practical Coursework 1 (Asynch) | Lab assignment | 0 | 1500 | 50 | No | 40 |
| Synchronous Onsite Assessment (Exam) | Onsite Closed Book Examination 1 | End of year examination | 120 | N/A | 50 | No | 40 |
Assessment Matrix
| Assessment Type | Learning Outcomes | ||
|---|---|---|---|
| LO1 | LO2 | ||
| Practical Coursework 1 (Asynch) | ✔ | ✔ | |
| Onsite Closed Book Examination 1 | ✔ | ✔ | |