NG3S921 - Advanced Semiconductors 01 Jul 2022 - 31 Aug 2028 | Version 1
Associated Module Information
| Module Code: | NG3S921 | ||
|---|---|---|---|
| Module Title: | Advanced Semiconductors | ||
| Faculty: | Faculty of Computing, Engineering and Science | ||
| Faculty Group: | Information and Electronics | ||
| Faculty Sub Group: | Electronics | ||
| Module Leader: | Kang Li | ||
| Module Team: | Nigel Copner | ||
| First Intended Intake: | SEP 2022 | Final Year of Intake: | 2027 |
| Date Closed: | |||
| Credit Value: | 20 | Credit Level: | 6 |
| Language: | English | ||
| Percentage of Module Taught in Welsh: | 0 | ||
| Equivalent Module: | |||
| HECOS codes: | 100163 - electrical and electronic engineering | ||
| HECOS Code Weighting: | 100 | ||
Document Version Information
| Version | 1 |
|---|---|
| Valid From | 01 Jul 2022 |
| Valid To | 31 Aug 2028 |
Module Aims
The aims of this module are to:
To develop an appropriate body of knowledge around semiconductors principles of operations and methods of fabrication. Students will also study fundamental aspects of semiconductor material properties and the device operation.
Content Summary
• Semiconductor materials /intrinsic/extrinsic
• Properties of semiconductors-
• Variable electrical conductivity, heterojunctions, excited electrons/energy bands/fermi/electrons and holes, carrier generation and recombination, light emission.
• Materials-
Crystal lattice and bandgap engineering: group 14 (silicon, germanium)
Binary compounds (Gallium Arsenide, Silicon carbide, Gallium Nitride)
Ternary - AlGaAs, InGaN
Quaternary – InGaAsP
• Semiconductor wafer processes:
Thermal oxidation (silicon dioxide gate insulator/field oxide
Photomasks/photolithography (circuit patterning IC) ultraviolet.
Etching/plasma
Diffusion/doping (pn junctions)
• Semiconductor device construction and properties:
PN junction diode, Schottky Barrier, Zener Diodes, Transistors
Field effect transistors (FET/mosfets/mesfets/jfets)
LED’s, VCSELs and lasers.
• Microwave, power transistors and MEMS.
Learning and Teaching Methods
| Activity Type | Hours |
|---|---|
| Lecture | 48 |
| Practical classes and workshops | 24 |
| Independent Study | 104 |
| Directed Study | 24 |
| Total Hours Selected | 200 |
Learning Outcomes
| # | Learning Outcome |
|---|---|
| LO1 | To analyse the methods of fabrication relevant to the semiconductor industry and distinguish the different parts required in the process. |
| LO2 | To acquire and demonstrate comprehensive knowledge of semiconductors applications, their classification, and the related testing procedures. |
Module Requisites
N/A
Assessment Criteria
| Assessment Category | Assessment Type | Description | Duration | Word Count | Weight (%) | Best of? | Pass Mark |
|---|---|---|---|---|---|---|---|
| Synchronous Onsite Practical Assessment | Practical Coursework (Onsite) 1 | Exercises undertaken in class or in laboratory aimed at assessing the application of knowledge, analytical, problem-solving or evaluative skills with written report | 0 | 720 | 50 | No | 40 |
| Synchronous Onsite Assessment (Exam) | Onsite Closed Book Examination 1 | A test of knowledge and understanding by unseen questions, delivered onsite and time constrained to not more than 3 hours. | 120 | N/A | 50 | No | 40 |
Assessment Matrix
| Assessment Type | Learning Outcomes | ||
|---|---|---|---|
| LO1 | LO2 | ||
| Practical Coursework (Onsite) 1 | ✔ | ✔ | |
| Onsite Closed Book Examination 1 | ✔ | ✔ | |